Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 1,00
€ 0,02 Buc. (Intr-un pachet de 50) (fara TVA)
€ 1,19
€ 0,024 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 1,00
€ 0,02 Buc. (Intr-un pachet de 50) (fara TVA)
€ 1,19
€ 0,024 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs