Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.6 A
Maximum Drain Source Voltage
60 V
Serie
DMT
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.4 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Latime
3.95mm
Lungime
4.95mm
Typical Gate Charge @ Vgs
17 @ 10 V nC
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.5mm
Automotive Standard
AEC-Q101
Detalii produs
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 6,20
€ 0,62 Buc. (Livrat pe rola) (fara TVA)
€ 7,38
€ 0,738 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 6,20
€ 0,62 Buc. (Livrat pe rola) (fara TVA)
€ 7,38
€ 0,738 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
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Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.6 A
Maximum Drain Source Voltage
60 V
Serie
DMT
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.4 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Latime
3.95mm
Lungime
4.95mm
Typical Gate Charge @ Vgs
17 @ 10 V nC
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.5mm
Automotive Standard
AEC-Q101
Detalii produs