Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Tip pachet
X2-DFN1006
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
920 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Lungime
1.08mm
Typical Gate Charge @ Vgs
1.5 nC @ 8 V
Temperatura maxima de lucru
+150 °C
Latime
0.675mm
Transistor Material
Si
Inaltime
0.35mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
25
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Tip pachet
X2-DFN1006
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
920 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Lungime
1.08mm
Typical Gate Charge @ Vgs
1.5 nC @ 8 V
Temperatura maxima de lucru
+150 °C
Latime
0.675mm
Transistor Material
Si
Inaltime
0.35mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs


