Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 7,25
€ 0,29 Buc. (Intr-un pachet de 25) (fara TVA)
€ 8,77
€ 0,351 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 7,25
€ 0,29 Buc. (Intr-un pachet de 25) (fara TVA)
€ 8,77
€ 0,351 Buc. (Intr-un pachet de 25) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


