Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
U-DFN2020
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
2.05mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.05mm
Typical Gate Charge @ Vgs
14.4 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.58mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
25
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
U-DFN2020
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
2.05mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.05mm
Typical Gate Charge @ Vgs
14.4 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.58mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs


