Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
30 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Lungime
1.05mm
Temperatura maxima de lucru
+150 °C
Latime
0.65mm
Transistor Material
Si
Inaltime
0.35mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
Standard
50
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
50
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
30 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Lungime
1.05mm
Temperatura maxima de lucru
+150 °C
Latime
0.65mm
Transistor Material
Si
Inaltime
0.35mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


