Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
1.4mm
Number of Elements per Chip
1
Lungime
3mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Detalii produs
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 10,50
€ 0,21 Buc. (Intr-un pachet de 50) (fara TVA)
€ 12,70
€ 0,254 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 10,50
€ 0,21 Buc. (Intr-un pachet de 50) (fara TVA)
€ 12,70
€ 0,254 Buc. (Intr-un pachet de 50) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 50 - 450 | € 0,21 | € 10,50 |
| 500 - 1200 | € 0,12 | € 6,00 |
| 1250 - 4950 | € 0,09 | € 4,50 |
| 5000+ | € 0,09 | € 4,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
1.4mm
Number of Elements per Chip
1
Lungime
3mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Detalii produs


