Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
10.2 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 45,00
€ 0,09 Buc. (Livrat pe rola) (fara TVA)
€ 53,55
€ 0,107 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
500
€ 45,00
€ 0,09 Buc. (Livrat pe rola) (fara TVA)
€ 53,55
€ 0,107 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
500
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
500 - 900 | € 0,09 | € 9,00 |
1000 - 2400 | € 0,07 | € 7,00 |
2500 - 4900 | € 0,07 | € 7,00 |
5000+ | € 0,05 | € 5,00 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
10.2 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs