Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Tip pachet
PDI3333
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.15mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Inaltime
0.8mm
Dimensiune celula
DMC3016LDV
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,81
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,964
Buc. (Intr-un pachet de 20) (cu TVA)
20
€ 0,81
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,964
Buc. (Intr-un pachet de 20) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 80 | € 0,81 | € 16,20 |
100 - 480 | € 0,68 | € 13,60 |
500 - 980 | € 0,66 | € 13,20 |
1000 - 1980 | € 0,64 | € 12,80 |
2000+ | € 0,62 | € 12,40 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Tip pachet
PDI3333
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.15mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Inaltime
0.8mm
Dimensiune celula
DMC3016LDV
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs