Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.05mm
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 3,85
€ 0,77 Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,66
€ 0,932 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 3,85
€ 0,77 Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,66
€ 0,932 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 25 | € 0,77 | € 3,85 |
| 30 - 145 | € 0,51 | € 2,55 |
| 150 - 745 | € 0,38 | € 1,90 |
| 750 - 1495 | € 0,33 | € 1,65 |
| 1500+ | € 0,30 | € 1,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.05mm
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


