Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Lungime
2.2mm
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 3,25
€ 0,13 Buc. (Intr-un pachet de 25) (fara TVA)
€ 3,93
€ 0,157 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 3,25
€ 0,13 Buc. (Intr-un pachet de 25) (fara TVA)
€ 3,93
€ 0,157 Buc. (Intr-un pachet de 25) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Lungime
2.2mm
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs


