Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
1.4mm
Lungime
3mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 60,00
€ 0,02 Buc. (Pe o rola de 3000) (fara TVA)
€ 72,60
€ 0,024 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 60,00
€ 0,02 Buc. (Pe o rola de 3000) (fara TVA)
€ 72,60
€ 0,024 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 3000 - 3000 | € 0,02 | € 60,00 |
| 6000 - 12000 | € 0,02 | € 60,00 |
| 15000 - 27000 | € 0,02 | € 60,00 |
| 30000+ | € 0,02 | € 60,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
1.4mm
Lungime
3mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Tara de origine
China
Detalii produs


