Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Latime
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
5
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Latime
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs