Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Latime
6.2mm
Lungime
6.6mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Inaltime
2.17mm
€ 2.425,00
€ 0,97 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.934,25
€ 1,174 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.425,00
€ 0,97 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.934,25
€ 1,174 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Latime
6.2mm
Lungime
6.6mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Inaltime
2.17mm