Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.65mm
Lungime
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
9.01mm
Tara de origine
China
€ 140,50
€ 2,81 Each (Supplied in a Tube) (fara TVA)
€ 170,00
€ 3,40 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
50
€ 140,50
€ 2,81 Each (Supplied in a Tube) (fara TVA)
€ 170,00
€ 3,40 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
50
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 120 | € 2,81 | € 14,05 |
125 - 245 | € 2,62 | € 13,10 |
250 - 495 | € 2,45 | € 12,25 |
500+ | € 2,27 | € 11,35 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.65mm
Lungime
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
9.01mm
Tara de origine
China