Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Tip pachet
DPAK (TO-252)
Serie
STripFET V
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.6mm
Latime
6.2mm
Transistor Material
Si
Inaltime
2.4mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 7,70
€ 1,54 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,16
€ 1,833 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 7,70
€ 1,54 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,16
€ 1,833 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 1,54 | € 7,70 |
25 - 45 | € 1,45 | € 7,25 |
50 - 120 | € 1,29 | € 6,45 |
125 - 245 | € 1,15 | € 5,75 |
250+ | € 1,08 | € 5,40 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Tip pachet
DPAK (TO-252)
Serie
STripFET V
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
13.4 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.6mm
Latime
6.2mm
Transistor Material
Si
Inaltime
2.4mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.