Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Inaltime
6.35mm
Latime
2.38mm
Maximum Power Dissipation
20 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
6.73 x 2.38 x 6.35mm
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
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€ 0,60
Each (In a Tube of 75) (fara TVA)
€ 0,714
Each (In a Tube of 75) (cu TVA)
75
€ 0,60
Each (In a Tube of 75) (fara TVA)
€ 0,714
Each (In a Tube of 75) (cu TVA)
75
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
75 - 75 | € 0,60 | € 45,00 |
150 - 300 | € 0,54 | € 40,50 |
375+ | € 0,52 | € 39,00 |
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Inaltime
6.35mm
Latime
2.38mm
Maximum Power Dissipation
20 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
6.73 x 2.38 x 6.35mm
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm