Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,06
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,071
Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 0,06
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,071
Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 450 | € 0,06 | € 3,00 |
500 - 950 | € 0,03 | € 1,50 |
1000 - 2450 | € 0,03 | € 1,50 |
2500 - 4950 | € 0,03 | € 1,50 |
5000+ | € 0,03 | € 1,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs