Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Tip pachet
PG-TO263-3
Timp montare
Surface Mount
Numar pini
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
€ 0,84
Buc. (Pe o rola de 800) (fara TVA)
€ 1,00
Buc. (Pe o rola de 800) (cu TVA)
Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
800
€ 0,84
Buc. (Pe o rola de 800) (fara TVA)
€ 1,00
Buc. (Pe o rola de 800) (cu TVA)
Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Informatii indisponibile despre stoc
800
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Tip pachet
PG-TO263-3
Timp montare
Surface Mount
Numar pini
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC