Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
100 V
Tip pachet
E-Line
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
700 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
4.77mm
Latime
2.41mm
Temperatura minima de lucru
-55 °C
Inaltime
4.01mm
Detalii produs
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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P.O.A.
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P.O.A.
5
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
100 V
Tip pachet
E-Line
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
700 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
4.77mm
Latime
2.41mm
Temperatura minima de lucru
-55 °C
Inaltime
4.01mm
Detalii produs