Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Timp montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
3.37mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 36,00
€ 0,36 Each (In a Tube of 100) (fara TVA)
€ 42,84
€ 0,428 Each (In a Tube of 100) (cu TVA)
100
€ 36,00
€ 0,36 Each (In a Tube of 100) (fara TVA)
€ 42,84
€ 0,428 Each (In a Tube of 100) (cu TVA)
100
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
100 - 100 | € 0,36 | € 36,00 |
200 - 400 | € 0,33 | € 33,00 |
500+ | € 0,30 | € 30,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Timp montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
3.37mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs