Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
60 V
Tip pachet
HVMDIP
Timp montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+175 °C
Inaltime
3.37mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor

€ 1,61
€ 1,61 Buc. (fara TVA)
€ 1,92
€ 1,92 Buc. (cu TVA)
Standard
1
€ 1,61
€ 1,61 Buc. (fara TVA)
€ 1,92
€ 1,92 Buc. (cu TVA)
Standard
1
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
1 - 9 | € 1,61 |
10 - 49 | € 1,43 |
50 - 99 | € 1,27 |
100 - 249 | € 1,17 |
250+ | € 1,08 |

Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
60 V
Tip pachet
HVMDIP
Timp montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+175 °C
Inaltime
3.37mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
