Documente tehnice
Specificatii
Marca
ToshibaChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Serie
TPC
Tip pachet
SOP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +20 V
Latime
3.9mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.9mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.52mm
Detalii produs
MOSFET P-Channel, TPC Series, Toshiba
MOSFET Transistors, Toshiba
€ 3,30
€ 0,66 Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,93
€ 0,785 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 3,30
€ 0,66 Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,93
€ 0,785 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 0,66 | € 3,30 |
50 - 495 | € 0,61 | € 3,05 |
500 - 2495 | € 0,58 | € 2,90 |
2500 - 4995 | € 0,51 | € 2,55 |
5000+ | € 0,47 | € 2,35 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Serie
TPC
Tip pachet
SOP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +20 V
Latime
3.9mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.9mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.52mm
Detalii produs