Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Tara de origine
Morocco
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 8,40
€ 1,68 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,00
€ 1,999 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 8,40
€ 1,68 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,00
€ 1,999 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 1,68 | € 8,40 |
10 - 20 | € 1,48 | € 7,40 |
25 - 95 | € 1,40 | € 7,00 |
100 - 495 | € 1,03 | € 5,15 |
500+ | € 0,87 | € 4,35 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Tara de origine
Morocco
Detalii produs