Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
ISOTOP
Timp montare
Screw Mount
Numar pini
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
9.1mm
Temperatura minima de lucru
-65 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 340,50
€ 34,05 Each (In a Tube of 10) (fara TVA)
€ 405,20
€ 40,52 Each (In a Tube of 10) (cu TVA)
10
€ 340,50
€ 34,05 Each (In a Tube of 10) (fara TVA)
€ 405,20
€ 40,52 Each (In a Tube of 10) (cu TVA)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
10 - 40 | € 34,05 | € 340,50 |
50 - 90 | € 32,21 | € 322,10 |
100 - 190 | € 28,12 | € 281,20 |
200 - 490 | € 26,00 | € 260,00 |
500+ | € 23,91 | € 239,10 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
ISOTOP
Timp montare
Screw Mount
Numar pini
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
9.1mm
Temperatura minima de lucru
-65 °C
Detalii produs