Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Serie
NVD5C668NL
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
6.22mm
Lungime
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
2.38mm
Automotive Standard
AEC-Q101
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 101,50
€ 2,03 Buc. (Livrat pe rola) (fara TVA)
€ 120,78
€ 2,416 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 101,50
€ 2,03 Buc. (Livrat pe rola) (fara TVA)
€ 120,78
€ 2,416 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 95 | € 2,03 | € 10,15 |
100 - 495 | € 1,74 | € 8,70 |
500 - 995 | € 1,52 | € 7,60 |
1000+ | € 1,37 | € 6,85 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Serie
NVD5C668NL
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
6.22mm
Lungime
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
2.38mm
Automotive Standard
AEC-Q101
Detalii produs