Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Latime
4.06mm
Lungime
5.08mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.85V
Inaltime
5.33mm
Tara de origine
Philippines
Detalii produs
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 430,00
€ 0,43 Buc. (Intr-o punga de 1000) (fara TVA)
€ 511,70
€ 0,512 Buc. (Intr-o punga de 1000) (cu TVA)
1000
€ 430,00
€ 0,43 Buc. (Intr-o punga de 1000) (fara TVA)
€ 511,70
€ 0,512 Buc. (Intr-o punga de 1000) (cu TVA)
1000
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Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Latime
4.06mm
Lungime
5.08mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.85V
Inaltime
5.33mm
Tara de origine
Philippines
Detalii produs
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.