Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
198 A
Maximum Drain Source Voltage
40 V
Serie
DirectFET
Tip pachet
DirectFET ISOMETRIC
Timp montare
Surface Mount
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
96 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.05mm
Number of Elements per Chip
1
Lungime
6.35mm
Typical Gate Charge @ Vgs
141 nC @ 20 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.53mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 41,00
€ 2,05 Buc. (Livrat pe rola) (fara TVA)
€ 48,79
€ 2,44 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 41,00
€ 2,05 Buc. (Livrat pe rola) (fara TVA)
€ 48,79
€ 2,44 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 48 | € 2,05 | € 4,10 |
50 - 98 | € 1,89 | € 3,78 |
100 - 198 | € 1,74 | € 3,48 |
200+ | € 1,61 | € 3,22 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
198 A
Maximum Drain Source Voltage
40 V
Serie
DirectFET
Tip pachet
DirectFET ISOMETRIC
Timp montare
Surface Mount
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
96 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.05mm
Number of Elements per Chip
1
Lungime
6.35mm
Typical Gate Charge @ Vgs
141 nC @ 20 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.53mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.