Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Serie
SIPMOS®
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
2.9mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
2.38 nC @ 10 V
Latime
1.3mm
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 37,50
€ 0,15 Buc. (Livrat pe rola) (fara TVA)
€ 44,62
€ 0,178 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
250
€ 37,50
€ 0,15 Buc. (Livrat pe rola) (fara TVA)
€ 44,62
€ 0,178 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
250
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Cantitate | Pret unitar | Per Rola |
---|---|---|
250 - 450 | € 0,15 | € 7,50 |
500 - 1200 | € 0,14 | € 7,00 |
1250 - 2450 | € 0,13 | € 6,50 |
2500+ | € 0,10 | € 5,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Serie
SIPMOS®
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
2.9mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
2.38 nC @ 10 V
Latime
1.3mm
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.