Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
450 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Lungime
15.75mm
Typical Gate Charge @ Vgs
204 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Inaltime
20.15mm
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
€ 388,80
€ 12,96 Each (In a Tube of 30) (fara TVA)
€ 462,67
€ 15,422 Each (In a Tube of 30) (cu TVA)
30
€ 388,80
€ 12,96 Each (In a Tube of 30) (fara TVA)
€ 462,67
€ 15,422 Each (In a Tube of 30) (cu TVA)
30
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
450 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Lungime
15.75mm
Typical Gate Charge @ Vgs
204 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Inaltime
20.15mm
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.