Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Latime
5.15mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
20.15mm
Detalii produs
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 87,30
€ 2,91 Each (In a Tube of 30) (fara TVA)
€ 103,89
€ 3,463 Each (In a Tube of 30) (cu TVA)
30
€ 87,30
€ 2,91 Each (In a Tube of 30) (fara TVA)
€ 103,89
€ 3,463 Each (In a Tube of 30) (cu TVA)
30
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 60 | € 2,91 | € 87,30 |
90 - 480 | € 2,30 | € 69,00 |
510 - 960 | € 2,03 | € 60,90 |
990 - 4980 | € 1,70 | € 51,00 |
5010+ | € 1,62 | € 48,60 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Latime
5.15mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
20.15mm
Detalii produs