Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 7,55
€ 1,51 Each (Supplied in a Tube) (fara TVA)
€ 8,98
€ 1,797 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
€ 7,55
€ 1,51 Each (Supplied in a Tube) (fara TVA)
€ 8,98
€ 1,797 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs