Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220
Serie
STripFET F7
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Lungime
10.4mm
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
€ 9,20
€ 0,92 Buc. (Intr-un pachet de 10) (fara TVA)
€ 10,95
€ 1,095 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 9,20
€ 0,92 Buc. (Intr-un pachet de 10) (fara TVA)
€ 10,95
€ 1,095 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220
Serie
STripFET F7
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Lungime
10.4mm
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.