Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
225 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Inaltime
0.94mm
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
10
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
10
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
225 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Inaltime
0.94mm