Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
650 V
Serie
X2-Class
Tip pachet
TO-264P
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Latime
26.3mm
Lungime
20.3mm
Typical Gate Charge @ Vgs
152 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.4V
Inaltime
5.3mm
Tara de origine
United States
Detalii produs
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 407,50
€ 16,30 Each (In a Tube of 25) (fara TVA)
€ 484,92
€ 19,397 Each (In a Tube of 25) (cu TVA)
25
€ 407,50
€ 16,30 Each (In a Tube of 25) (fara TVA)
€ 484,92
€ 19,397 Each (In a Tube of 25) (cu TVA)
25
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Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
650 V
Serie
X2-Class
Tip pachet
TO-264P
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Latime
26.3mm
Lungime
20.3mm
Typical Gate Charge @ Vgs
152 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.4V
Inaltime
5.3mm
Tara de origine
United States
Detalii produs
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS