Documente tehnice
Specificatii
Marca
InfineonChannel Type
N, P
Maximum Continuous Drain Current
1.7 A, 2.4 A
Maximum Drain Source Voltage
20 V
Tip pachet
MSOP
Serie
HEXFET
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
140 mΩ, 270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Lungime
3mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V, 5.4 nC @ 4.5 V
Latime
3mm
Transistor Material
Si
Inaltime
0.86mm
Temperatura minima de lucru
-55 °C
Detalii produs
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 0,70
€ 0,70 Buc. (fara TVA)
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€ 0,83 Buc. (cu TVA)
Standard
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€ 0,70
€ 0,70 Buc. (fara TVA)
€ 0,83
€ 0,83 Buc. (cu TVA)
Standard
1
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N, P
Maximum Continuous Drain Current
1.7 A, 2.4 A
Maximum Drain Source Voltage
20 V
Tip pachet
MSOP
Serie
HEXFET
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
140 mΩ, 270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Lungime
3mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V, 5.4 nC @ 4.5 V
Latime
3mm
Transistor Material
Si
Inaltime
0.86mm
Temperatura minima de lucru
-55 °C
Detalii produs
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.