Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Serie
OptiMOS P
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.25mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
4.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 96,50
€ 1,93 Buc. (Livrat pe rola) (fara TVA)
€ 114,84
€ 2,297 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 96,50
€ 1,93 Buc. (Livrat pe rola) (fara TVA)
€ 114,84
€ 2,297 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
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Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 100 | € 1,93 | € 48,25 |
125 - 225 | € 1,83 | € 45,75 |
250 - 475 | € 1,73 | € 43,25 |
500+ | € 1,59 | € 39,75 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Serie
OptiMOS P
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.25mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
4.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.