Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.65mm
Lungime
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
9.01mm
€ 90,50
€ 1,81 Each (In a Tube of 50) (fara TVA)
€ 109,50
€ 2,19 Each (In a Tube of 50) (cu TVA)
50
€ 90,50
€ 1,81 Each (In a Tube of 50) (fara TVA)
€ 109,50
€ 2,19 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,81 | € 90,50 |
100 - 200 | € 1,54 | € 77,00 |
250+ | € 1,43 | € 71,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.65mm
Lungime
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
9.01mm