Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
5mm
Transistor Material
Si
Latime
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
Tara de origine
China
Detalii produs
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 14,10
€ 1,41 Buc. (Intr-un pachet de 10) (fara TVA)
€ 16,78
€ 1,678 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 14,10
€ 1,41 Buc. (Intr-un pachet de 10) (fara TVA)
€ 16,78
€ 1,678 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 1,41 | € 14,10 |
50 - 90 | € 1,31 | € 13,10 |
100 - 240 | € 1,18 | € 11,80 |
250 - 490 | € 1,10 | € 11,00 |
500+ | € 1,02 | € 10,20 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
5mm
Transistor Material
Si
Latime
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
Tara de origine
China
Detalii produs