Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Serie
TK
Tip pachet
TO-3PN
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.5mm
Number of Elements per Chip
1
Lungime
15.5mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Inaltime
20mm
Tara de origine
Japan
Detalii produs
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 137,25
€ 5,49 Each (In a Tube of 25) (fara TVA)
€ 163,33
€ 6,533 Each (In a Tube of 25) (cu TVA)
25
€ 137,25
€ 5,49 Each (In a Tube of 25) (fara TVA)
€ 163,33
€ 6,533 Each (In a Tube of 25) (cu TVA)
25
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Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Serie
TK
Tip pachet
TO-3PN
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.5mm
Number of Elements per Chip
1
Lungime
15.5mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Inaltime
20mm
Tara de origine
Japan
Detalii produs