Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Serie
MDmesh
Tip pachet
H2PAK-2
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
15.8mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
4.8mm
Detalii produs
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 8,94
€ 4,47 Buc. (Livrat pe rola) (fara TVA)
€ 10,82
€ 5,409 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
2
€ 8,94
€ 4,47 Buc. (Livrat pe rola) (fara TVA)
€ 10,82
€ 5,409 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
2
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Serie
MDmesh
Tip pachet
H2PAK-2
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
15.8mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
4.8mm
Detalii produs