Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V, 9 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 7,40
€ 0,74 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,81
€ 0,881 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 7,40
€ 0,74 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,81
€ 0,881 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,74 | € 7,40 |
100 - 240 | € 0,63 | € 6,30 |
250 - 490 | € 0,54 | € 5,40 |
500 - 990 | € 0,47 | € 4,70 |
1000+ | € 0,43 | € 4,30 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V, 9 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia
Detalii produs