Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Serie
OptiMOS™ 3
Tip pachet
TSDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.4mm
Number of Elements per Chip
1
Lungime
3.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 33,00
Buc. (Livrat pe rola) (fara TVA)
€ 39,27
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 33,00
Buc. (Livrat pe rola) (fara TVA)
€ 39,27
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Serie
OptiMOS™ 3
Tip pachet
TSDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.4mm
Number of Elements per Chip
1
Lungime
3.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.