Documente tehnice
Specificatii
Channel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Latime
4mm
Typical Gate Charge @ Vgs
6 nC @ 5 V
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
5
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
5
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Documente tehnice
Specificatii
Channel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Latime
4mm
Typical Gate Charge @ Vgs
6 nC @ 5 V
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm