Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Serie
ThunderFET
Tip pachet
PowerPAK SC-70
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
2.15mm
Transistor Material
Si
Inaltime
0.75mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 5,60
€ 0,28 Buc. (Intr-un pachet de 20) (fara TVA)
€ 6,66
€ 0,333 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
€ 5,60
€ 0,28 Buc. (Intr-un pachet de 20) (fara TVA)
€ 6,66
€ 0,333 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 180 | € 0,28 | € 5,60 |
200 - 480 | € 0,23 | € 4,60 |
500 - 980 | € 0,21 | € 4,20 |
1000 - 1980 | € 0,21 | € 4,20 |
2000+ | € 0,20 | € 4,00 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Serie
ThunderFET
Tip pachet
PowerPAK SC-70
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
2.15mm
Transistor Material
Si
Inaltime
0.75mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs