Documente tehnice
Specificatii
Marca
VishayChannel Type
N, P
Maximum Continuous Drain Current
3.8 A, 6.6 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
20 mΩ, 60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
11 nC @ 4.5 V, 6 nC @ 4.5 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
Tara de origine
China
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Documente tehnice
Specificatii
Marca
VishayChannel Type
N, P
Maximum Continuous Drain Current
3.8 A, 6.6 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
20 mΩ, 60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
11 nC @ 4.5 V, 6 nC @ 4.5 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.55mm
Tara de origine
China