Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
530 mA
Maximum Drain Source Voltage
150 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 5,35
€ 1,07 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,47
€ 1,295 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 5,35
€ 1,07 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,47
€ 1,295 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
530 mA
Maximum Drain Source Voltage
150 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs