Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Latime
5.31mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 38,10
€ 3,81 Each (Supplied in a Tube) (fara TVA)
€ 45,34
€ 4,534 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 38,10
€ 3,81 Each (Supplied in a Tube) (fara TVA)
€ 45,34
€ 4,534 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
10 - 20 | € 3,81 | € 19,05 |
25 - 45 | € 3,51 | € 17,55 |
50 - 120 | € 3,26 | € 16,30 |
125+ | € 2,79 | € 13,95 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-247AC
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.87mm
Latime
5.31mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs