Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
9.8 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Inaltime
9.8mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 21,90
€ 2,19 Each (Supplied as a Tape) (fara TVA)
€ 26,06
€ 2,61 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
€ 21,90
€ 2,19 Each (Supplied as a Tape) (fara TVA)
€ 26,06
€ 2,61 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
10 - 49 | € 2,19 |
50 - 99 | € 2,04 |
100 - 249 | € 1,90 |
250+ | € 1,77 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
9.8 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Inaltime
9.8mm
Temperatura minima de lucru
-55 °C
Detalii produs