Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
120 V
Serie
TK
Tip pachet
TO-220SIS
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
10mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.5mm
Transistor Material
Si
Inaltime
15mm
Tara de origine
China
Detalii produs
MOSFET Transistors, Toshiba
€ 9,08
€ 2,27 Buc. (Intr-un pachet de 4) (fara TVA)
€ 10,81
€ 2,701 Buc. (Intr-un pachet de 4) (cu TVA)
Standard
4
€ 9,08
€ 2,27 Buc. (Intr-un pachet de 4) (fara TVA)
€ 10,81
€ 2,701 Buc. (Intr-un pachet de 4) (cu TVA)
Standard
4
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Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
120 V
Serie
TK
Tip pachet
TO-220SIS
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
10mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.5mm
Transistor Material
Si
Inaltime
15mm
Tara de origine
China
Detalii produs